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2SC2620
Silicon NPN Epitaxial Planar
REJ03G0704-0200 (Previous ADE-208-1071) Rev.2.00 Aug.10.2005
Application
VHF amplifier, Local oscillator
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 20 100 150 -55 to +150 Unit V V V mA mW C C
Rev.2.00 Aug 10, 2005 page 1 of 7
2SC2620
Electrical Characteristics
(Ta = 25C)
Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product fT Collector output capacitance Cob Note: 1. The 2SC2620 is grouped by hFE as follows. Grade B C Mark QB QC hFE 60 to 120 100 to 200 Min 30 20 4 -- -- 60 -- -- -- -- Typ -- -- -- -- -- -- 0.17 0.72 940 0.9 Max -- -- -- 0.5 0.5 200 -- -- -- -- Unit V V V A A V V MHz pF Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = IE = 10 A, IC = 0 VCB = 10 V, IC = 0 VEB = 2 V, IC = 0 VCE = 6 V, IC = 1 mA IC = 20 mA, IB = 4 mA VCE = 6 mA, IC = 1 mA VCE = 6 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz
Rev.2.00 Aug 10, 2005 page 2 of 7
2SC2620
Main Characteristics
Maximum Collector Dissipation Curve Typical Output Characteristics
20
Collector Power Dissipation Pc (mW)
150
Collector Current IC (mA)
16 12 8
100
300 275 250 225 200 175 150 125 100
P
75 50 4
C
=1
50
00
mW
25 A IB = 0
0
50
100
150
0
4
8
12
16
20
Ambient Temperature Ta (C)
Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current
120 VCE = 6 V 100 80 60 40 20 0 0.1
Typical Output Characteristics
5
4 3 2 1
40
30
20 10A
IB = 0 0 4 8 12 16 20
DC Current Transfer ratio hFE
50
Collector Current IC (mA)
0.2
0.5
1.0
2
5
10
20
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
Typical Transfer Cahracteristics (1)
20 5
Typical Transfer Cahracteristics (2)
Collector Current IC (mA)
16
Collector Current IC (mA)
VCE = 6 V
VCE = 6 V 4
12
3
8
2
4
1
0 0.6
0.7
0.8
0 0.6
0.7
0.8
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
Rev.2.00 Aug 10, 2005 page 3 of 7
2SC2620
Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF)
1.5
Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz)
1.3
f = 1 MHz IE = 0
1,000 800 600 400 200 0 0.1 VCE = 6 V
1.1
0.9
0.7
0.5 0.3
1.0
3
10
30
0.2
0.5
1.0
2
5
10
20
Collector to Base Voltage VCB (V)
Collector Current IC (mA)
Noise Figure vs. Collector Current
8 IC = 1 mA f = 100 MHz Rg = 50 8
Noise Figure vs. Signal Source Resistance
VCE = 6 V IC = 1 mA f = 100 MHz 6
Noise figure NF (dB)
6
4
Noise figure NF (dB)
1.0 2 5 10
4
2
2
0 0.2
0.5
0 20
50
100
200
500
1,000
Collector Current IC (mA) Noise Figure vs. Collector to Emitter Voltage
8 VCE = 6 V f = 100 MHz Rg = 50
Signal Source Resistance Rg ()
100 MHz Power Gain Test Circuit
Noise figure NF (dB)
6
IN f = 100 MHz Rg = 100
300 p
D.U.T.
10 p max
0.1
OUT Rl = 550
3k 4
500
0.01
0.01 2 VEE
0.01
VCC
Unit R : C:F
0 1 2 5 10 20
Collecter to Emitter Voltage VCE (V)
Rev.2.00 Aug 10, 2005 page 4 of 7
2SC2620
Reverse Transfer Admittance Characteristics Reverse Transfer Conductance gre (mS)
yre = gre + jbre VCE = 6 V
Input Admittance Characteristics
18 yie = gie + jbie VCE = 6 V
Input Suceptance bie (mS)
16 14 12
f = 50 MHz 70
-0.2 -0.4 -0.6
10 f = 200 MHz 8 150 70 50 MHz 5 mA
150 100
200
100 150 200 IC = 5 mA 3 2 1
6 100 70 3 mA 4 2 mA 2 50 IC = 1 mA 0 2 4
-0.8 -1.0
6
8
10 12 14 16 18
Input Conductance gie (mS) Forward Transfer Admittance Characteristics Forward Transfer Conductance gfe (mS)
Output Admittance Characteristics
2.4 yoe = goe + jboe VCE = 6 V IC = 1 mA 2 3 5 f = 200 MHz 1.2 0.8 0.4 100 70 50 0.1 0.2 0.3 0.4 0.5 0.6 150
Forward Transfer Suceptance bfe (mS)
0
20
40
60
80
100 120
-20 -40 -60 -80 -100 -120
Output Suceptance boe (mS)
yfe = gfe + jbfe VCE = 6 V IC = 1 mA 2 mA f = 50 MHz 3 mA 70 5 mA 200 150 100
2.0 1.6
0
Output Conductance goe (mS) Input Admittance vs. Collector to Emitter Voltage
10
Input Admittance vs. Collector Current
20
Input Admittance yie (mS)
bie 5 yie = gie + jbie IC = 1 mA f = 100 MHz gie 1.0
Input Admittance yie (mS)
10 5
yie = gie + jbie VCE = 6 V f = 100 MHz bie
2
2 1.0 0.5 0.2 0.1 gie
0.5 1 2 5 10 20
0.2
0.5
1.0
2
5
10
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 5 of 7
Reverse Transfer Suceptance bre (mS)
-0.20 -0.16 -0.12 -0.08 -0.04
0
2SC2620
Reverse Transfer Admittance vs. Collector to Emitter Voltage
Reverse Transfer Suceptance bre (mS) Reverse Transfer Suceptance bre (mS) Reverse Transfer Conductance gre (mS)
-1.0 -0.1 -1.0 -0.5 -0.2 -0.1 -0.05 yre = gre + jbre VCE = 6 V f = 100 MHz bre
Reverse Transrer Admittance vs. Collector Current
-0.1 -0.05 -0.02 gre -0.01 -0.005
-5 yre = gre + jbre IC = 1 mA f = 100 MHz
bre
-0.05
-0.2
-0.02
-0.1
gre
-0.01
-0.02 -0.01 0.1
-0.002 -0.001 0.2 0.5 1.0 2 5 10
-0.05 1 2 5 10 20
-0.005
Collector to Emitter Voltage VCE (V) Forward Transfer Admittance vs. Collector to Emitter Voltage
Forward Transfer Admittance yie (mS)
100 yfe = gfe + jbfe IC = 1 mA f = 100 MHz gfe
Collector Current IC (mA)
Forward Transrer Admittance vs. Collector Current
Forward Transrer Admittance yie (mS)
100 50 20 10 5 yfe = gfe + jbfe VCE = 6 V f = 100 MHz
50
gfe
-bfe
20 -bfe 10
2 1 0.1
5 1 2 5 10 20
0.2
0.5
1.0
2
5
10
Collector to Emitter Voltage VCE (V) Output Admittance vs. Collector to Emitter Voltage
2.0 0.2
Collector Current IC (mA)
Output Admittance vs. Collector Current
2.0
Output Conductance goe (mS)
Output Suceptance boe (mS)
Output Admittance yoe (mS)
goe 1.0 boe 0.5 yeo = goe + jboe IC = 1 mA f = 100 MHz 0.2 0.02 0.05 0.1
1.0 0.5
boe
0.2 0.1 goe 0.05 yoe = goe + jboe VCE = 6 V f = 100 MHz 0.2 0.5 1.0 2 5 10
0.1 1 2 5 10
0.01 20
0.02 0.1
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 6 of 7
Reverse Transfer Conductance gre (mS)
2SC2620
Package Dimensions
JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV MASS[Typ.] 0.011g
D e
A
Q
c
E
HE
L A A xM S A b
L1 A3 e
LP
Reference Symbol Dimension in Millimeters
A2
A
A1 S b b1 c b2 A-A Section
e1
c1
I1
Pattern of terminal position areas
A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q
Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25
Nom
1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8
Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05
1.95 0.3
Ordering Information
Part Name 2SC2620QBTL-E 2SC2620QCTL-E 3000 Quantity Shipping Container 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Aug 10, 2005 page 7 of 7
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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